The primary goal of the SAGAN project is to design and manufacture Gallium Nitride (GaN) transistors that can withstand the harsh conditions of space. These transistors are crucial for various space applications, including satellite communications and space exploration missions. The project is structured around several key work packages, each focusing on different aspects of the development process. Two complete design cycles will be performed by SAGaN consortium.

Key Achievements and Milestones

Initial Testing and Design:

• The first phase of the project involved preparing test setups and conducting initial radiation tests on baseline GaN technology. These tests provided valuable insights that guided the design of more robust transistors.
• The team successfully completed the design of the first set of transistors, incorporating improvements based on the initial test results.

Manufacturing and Testing:

• The project has progressed to the manufacturing stage, with the first batch of transistors produced and tested at the wafer level. These tests confirmed that the electrical characteristics of the transistors meet the required standards.
• The transistors are currently being prepared to undergo further radiation testing to ensure their robustness in space environments.

Project Milestones:

• The project has achieved several important milestones, including the Kick-Off Meeting (KOM) and the System Requirements Review (SRR). These milestones involved extensive collaboration and review by project partners and external experts.
• Before end of 2024, the results of radiation testing will be reviewed at PDR.